特点
正向导通损耗小;正向压降低;
芯片采用硅外延平面结构;
封装形式:金属陶瓷封装(SMD-0.1)
该系列产品为单芯二级管,产品型号后加缀“S”标识。
质量等级及执行标准
G、G+级,Q/RBJ8500-2010,QZJ840611;
最大额定值和电特性
贮存温度Tstg:-55℃~150℃;
工作温度Tamb:-55℃~125℃。
型号/ 参数 | 最大额定值 | 主要电特性 | ||||
IFM(A) | VBR(V) | VRWM(V) | IFSM(A) | IR(mA) | VFM(V) | |
IR=0.1mA | tp=10ms | VR=0.8VRWM | IF=IFM | |||
2DK240SU | 2 | ≥40 | 30 |
30 |
0.1 |
≤0.70 |
2DK260SU | ≥60 | 48 | ||||
2DK280SU | ≥80 | 64 | ||||
2DK2100SU | ≥100 | 80 | ||||
2DK340SU |
3 | ≥40 | 30 |
30 |
0.1 |
≤0.75 |
2DK360SU | ≥60 | 48 | ||||
2DK380SU | ≥80 | 64 | ||||
2DK3100SU | ≥100 | 80 | ||||
2DK440SU | 4 | ≥40 | 30 |
30 |
0.1 |
≤0.8 |
2DK460SU | ≥60 | 48 | ||||
2DK480SU | ≥80 | 64 | ||||
2DK4100SU | ≥100 | 80 | ||||
2DK540SU | 5 | ≥40 | 30 |
30 |
0.1 |
≤0.85 |
2DK560SU | ≥60 | 48 | ||||
2DK580SU | ≥80 | 64 | ||||
2DK5100SU | ≥100 | 80 |