- 产品详情
- 产品参数
特点
正向导通损耗小；正向压降低；
芯片采用硅外延平面结构；
可提供封装外形有：金属陶瓷封装（SMD-2）、通孔插装（TO-257）、金属圆帽封装（B2-01B）。
质量等级及执行标准
G、G+级，QZJ840611；
2DK20200：JP、JT、JCT级，Q/RBJ21058-2009;
2DK30100：JP、JT、JCT级，ZZR-Q/RBJ20054-2008;
2DK3040S、2DK3080S：JP、JT、JCT级，Q/RBJ30004-2006;
2DK2040S、2DK2080S：JP、JT、JCT级，Q/RBJ30003-2006;
2DK2045S：JP、JT、JCT级，ZZR(Z)-Q/RBJ22100-2009;
2DK35100S：JP、JT、JCT级，ZZR(Z)-Q/RBJ22101-2009;
2DK35100T、2DK35100S：JP、JT、JCT级，ZZR(Z)-Q/RBJ22102-2009.
最大额定值和电特性
贮存温度Tstg：-55℃~150℃；工作温度Tamb：-55℃~125℃
型号/参数 | 最大额定值 | 主要电特性 | ||||
IFM(A) | VBR(V) | VRWM(V) | IFSM(A) | IR(mA) | VFM(V) | |
IR=0.1mA | tp=10ms | VR=0.8VRWM | IF=IFM | |||
2DK2040 | 10 | ≥40 | 30 |
200 |
≤0.5 |
≤0.7 |
2DK2045 | ≥45 | 45 | ||||
2DK2060 | ≥60 | 50 | ||||
2DK2080 | ≥80 | 60 | ||||
2DK20100 | ≥100 | 80 | ||||
2DK20120 | ≥120 | 100 |
180 | |||
2DK20150 | ≥150 | 130 | ≤0.82 | |||
2DK20200 | ≥200 | 180 | ||||
2DK3040 |
30 | ≥40 | 30 |
300 |
≤0.5 |
≤0.78 |
2DK3060 | ≥60 | 50 | ||||
2DK3080 | ≥80 | 60 | ||||
2DK30100 | ≥100 | 80 | ||||
2DK30120 | ≥120 | 100 |
280 | |||
2DK30150 | ≥150 | 130 | ≤0.88 | |||
2DK30200 | ≥200 | 180 | ||||
2DK35100S |
35 | ≥100 | 100 | ≤1.22 | ||
2DK35150a | ≥150 | 130 | ≤0.92 | |||
2DK35150Tb | ≥150 | 150 | 180 | ≤1.6 | ||
2DK35200 | ≥200 | 180 | 280 | ≤0.92 | ||
