2DK540M~2DK15200M型硅肖特基整流二极管系列 (双独立二极管)
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- 产品详情
- 产品参数
特点
正向导通损耗小；正向压降低；
芯片采用硅外延平面结构；
封装形式：通孔插装（MO-078）。
质量等级及执行标准
G、G+级，QZJ840611；
最大额定值和电特性
贮存温度Tstg：-55℃~150℃
工作温度Tamb：-55℃~125℃
型号/参数 | 最大额定值 | 主要电特性 | ||||
IFM(A) | VBR(V) | VRWM(V) | IFSM(A) | IR(mA) | VFM(V) | |
IR=0.1mA | tp=10ms | VR=0.8VRWM | IF=IFM | |||
2DK540M |
5x2 | ≥40 | 30 |
60 |
≤0.5 | ≤0.65 |
2DK560M | ≥60 | 50 | ||||
2DK580M | ≥80 | 60 | ≤0.68 | |||
2DK5100M | ≥100 | 80 | ||||
2DK840M |
8x2 | ≥40 | 30 |
80 |
≤0.5 | ≤0.68 |
2DK860M | ≥60 | 50 | ||||
2DK880M | ≥80 | 60 | ≤0.75 | |||
2DK8100M | ≥100 | 80 | ||||
2DK1040M |
10x2 | ≥40 | 30 |
100 |
≤0.5 | ≤0.75 |
2DK1060M | ≥60 | 50 | ||||
2DK1080M | ≥80 | 60 | ≤0.8 | |||
2DK10100M | ≥100 | 80 | ||||
2DK10120M | ≥120 | 100 | ≤0.82 | |||
2DK10150M | ≥150 | 130 | ||||
2DK15150M |
15x2 | ≥150 | 130 |
150 |
≤0.5 |
≤0.88 |
2DK15180M | ≥180 | 160 | ||||
2DK15200M | ≥200 | 180 | ||||
材质
硅
产品描述
正向导通损耗小；正向压降低；
